Kazuhiro Mochizuki

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Speaker, Author, Co-Author

Sun. Sep 12, 2021 1:30 PM - 5:15 PM N305 (Oral)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[12p-N305-1~14] 13.7 Compound and power devices, process technology and characterization

1:30 PM - 1:45 PM

[12p-N305-1] Non-radiative Recombination Lifetime and Effective Dislocation Radius in an n-GaN Layer on M-3D Substrates

〇Kazuhiro Mochizuki¹, Hiroshi Ohta¹, Fumimasa Horikiri², Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

Mon. Sep 13, 2021 1:00 PM - 6:00 PM N101 (Oral)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[13p-N101-1~18] 15.4 III-V-group nitride crystals

1:15 PM - 1:30 PM

[13p-N101-2] Possible Contribution of the Gibbs−Thomson Effect to Filling Nanopipes during Homoepitaxial Growth of GaN

〇Kazuhiro Mochizuki¹, Fumimasa Horikiri², Hiroshi Ohta¹, Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)