Session information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[10p-N101-1~20] 15.4 III-V-group nitride crystals

Fri. Sep 10, 2021 1:00 PM - 6:30 PM N101 (Oral)

Munetaka Arita(Univ. of Tokyo), Ryuji Katayama(Osaka Univ.), Ryota Ishii(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[10p-N101-1] Effect of point defects on optical properties of GaN

〇(M2)Satoshi Ohata¹, Takahiro Kawamura^1,2, Masayuki Imanishi², Masashi Yoshimura², Yusuke Mori² (1.Mie Univ., 2.Osaka Univ.)

1:15 PM - 1:30 PM

[10p-N101-2] Nanoscale Thermometry Based on Photoluminescence from Praseodymium Ions in Gallium Nitride Semiconductor

〇Shinichiro Sato^1,2, Manato Deki³, Tomoaki Nishimura⁴, Hirotaka Watanabe³, Shugo Nitta³, Yoshio Honda³, Hiroshi Amano³, Andrew Greentree², Brant Gibson², Takeshi Ohshima¹ (1.QST, 2.RMIT Univ., 3.Nagoya Univ., 4.Hosei Univ.)

1:30 PM - 1:45 PM

[10p-N101-3] Thermal radiation with longitudinal optical phonon or phonon polariton energies from GaN-metal mesa micro-striped structures

〇(D)Bojin Lin¹, Yuto Imae¹, Kotaro Hayashi¹, Lai Lai Aye Hnin¹, Bei Ma¹, Hideto Miyake², Yoshihiro Ishitani¹ (1.Chiba Univ., 2.Mie Univ.)

1:45 PM - 2:00 PM

[10p-N101-4] Theoretical modeling of temperature-dependent PL spectra in InGaN quantum wells

〇Shunya Hakamata¹, Takashi Fujita¹, Atsushi Yamaguchi¹, susumu Kusanagi², Yuya Kanitani², Yoshihiro Kudo², Shigetaka Tomiya² (1.Kanazawa Inst Tech., 2.Sony Group Corp.)

2:00 PM - 2:15 PM

[10p-N101-5] Origin of temperature dependence of exciton radiative lifetime analyzed by phononic-excitonic-radiative model

〇(M2)Masaya Chizaki¹, Kensuke Oki¹, Yoshihiro Ishitani¹ (1.Chiba Univ.)

2:15 PM - 2:30 PM

△ [10p-N101-6] In Composition Dependence of Internal Quantum Efficiency in InGaN Quantum-Wells Measured by Simultaneous Microscopic Photoacoustic and Photoluminescence Spectroscopy

〇Keito Mori¹, Yuchi Takahashi¹, Yuya Morimoto¹, Atsushi Yamaguchi¹, Susumu Kusanagi², Yuya Kanitani², Yoshihiro Kudo², Shigetaka Tomiya² (1.Kanazawa Inst. Tech., 2.Sony Group Corp.)

2:45 PM - 3:00 PM

[10p-N101-7] Si-doped homoepitaxial AlN films studied by low-temperature photoluminescence spectroscopy

〇Ryota Ishii¹, Yoshikawa Akira², Kobayashi Hirotsugu², Funato Mitsuru¹, Kawakami Yoichi¹ (1.Kyoto Univ., 2.Asahi Kasei corp.)

3:00 PM - 3:15 PM

[10p-N101-8] Spatially resolved CL studies of h-BN films on sap. by CVD using C-free precursors

〇Shigefusa Chichibu¹, Kohei Shima¹, Naoki Umehara², Kazunobu Kojima¹, Kazuhiko Hara^2,3 (1.IMRAM-Tohoku Univ., 2.GSST-Shizuoka Univ., 3.RIE-Shizuoka Univ.)

3:15 PM - 3:30 PM

[10p-N101-9] Luminescence from single excitons in an AlGaN localization center

〇Munetaka Arita¹, Mark Holmes^1,2, Yasuhiko Arakawa¹ (1.NanoQuine, Univ. of Tokyo, 2.IIS, Univ. of Tokyo)

3:30 PM - 3:45 PM

△ [10p-N101-10] Improvement of light extraction efficiency of micro-LEDs using photonic bullseyes

〇(M2)Diego Shinji Kawaguchi¹, Yasuhiko Arakawa², Mark Holmes^1,2 (1.IIS, Univ. of Tokyo, 2.NanoQuine, Univ. of Tokyo)

3:45 PM - 4:00 PM

[10p-N101-11] Fabrication of GaN nano-porous crystals by anisotropic thermal etching

〇Umito Kurabe¹, Yuki Yamazaki¹, Kentaro Kinoshita¹, Koji Yoneta¹, Akihiko Kikuchi^1,2,3 (1.Sophia Univ., 2.Sophia Photonics Research Center., 3.Sophia Semiconductor Research Institute.)

4:00 PM - 4:15 PM

[10p-N101-12] Fabrication of GaN Topological Photonic Crystal Membranes in Visible Wavelength Region by Combination Process of HEATE and Wet Etching

〇Koji Yoneta¹, Taiju Kudo¹, Umito Kurabe¹, Akihiko Kikuchi^1,2,3 (1.Sophia Univ., 2.Sophia Photonics Research Center, 3.Sophia Semiconductor Research Institute)

4:15 PM - 4:30 PM

△ [10p-N101-13] Fabrication and optical characterization of Eu-doped GaN-based high-Q H3 photonic crystal cavities

〇Takenori Iwaya¹, Shuhei Ichikawa^1,2, Dolf Timmerman¹, Masato Murakami¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.Research Center for UHVEM, Osaka Univ.)

4:45 PM - 5:00 PM

△ [10p-N101-14] Room-temperature red light emission from Eu-doped GaN nanowires on flexible membranes

〇Takaya Otabara¹, Jun Tatebayashi^1,2, Shunya Hasegawa¹, Shuhei Ichikawa^1,3, Masaaki Ashida⁴, Yasufumi Fujiwara¹ (1.Grad. Sch. Eng. ,Osaka Univ., 2.QIQB, 3.UHVEM, 4.Grad. Sch. Eng. Sci., Osaka Univ.)

5:00 PM - 5:15 PM

△ [10p-N101-15] Size dependence of quantum efficiency for Eu emission in Eu-doped GaN

〇Toshihiro Ishihara¹, Shuhei Ichikawa^1,2, Dolf Timmerman¹, Takenori Iwaya¹, Masaaki Ashida³, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Graduate School of Engineering, Osaka Univ, 2.UHVEM, osaka Univ, 3.Graduate School of Engineering Science, Osaka Univ)

5:15 PM - 5:30 PM

△ [10p-N101-16] Photoluminescence enhancement mechanism of GaN using surface plasmon resonance with Ag nanoparticles

〇(M1)Seiya Kaito¹, Tetsuya Matsuyama¹, Kenji Wada¹, Mitsuru Funato², Yoichi Kawakami², Koichi Okamoto¹ (1.Osaka Prefecture Univ., 2.Kyoto Univ.)

5:30 PM - 5:45 PM

[10p-N101-17] Influence of Ag plasmonic crystals to band structures in InGaN nanocolumn arrays

〇Shotaro Hayakawa¹, Koichi Okamoto², Rie Togashi^3,4, Katsumi KIshino⁴, Takao Oto¹ (1.Yamagata Univ., 2.Osaka Pref. Univ., 3.Sophia Univ., 4.Sophia Nanotech.)

5:45 PM - 6:00 PM

[10p-N101-18] Variation of radiative/non-radiative recombination rates and improvement of internal quantum efficiency in surface plasmon emission enhancement of polar/semi-polar InGaN/GaN

〇Kento Ikeda¹, Kanata Kawai¹, Tetsuya Matsuyama¹, Kenji Wada¹, Narihito Okada², Kazuyuki Tadatomo², Koichi Okamoto¹ (1.Osaka Pref. Univ., 2.Yamaguchi Univ.)

6:00 PM - 6:15 PM

[10p-N101-19] Influence of column division on emission propertices in InGaN nanocolumn arrays

〇Soutarou Miyazaki¹, Yuta Asai¹, Yuzo Matui², Rie Togashi^2,3, Katumi Kishino³, Takao oto¹ (1.Yamagata Univ., 2.Sophia Univ., 3.Sophia Nanotech.)

6:15 PM - 6:30 PM

[10p-N101-20] Local structural analysis of Ga_1-xIn_xN/GaN quantum shells on a GaN substrate by using X-ray nano-beam diffraction

〇(M2)Ryota Kobayashi¹, Syoya Ota¹, Kazuki Nishimura¹, Koki Aoyama¹, Haruki Akasaka¹, Kazushi Sumitani², Yasuhiko Imai², Shigeru Kimura², Yoshiya Miyamoto¹, Satoshi Kamiyama¹, Daichi Imai¹, Takao Miyajima¹ (1.Meijo Univ., 2.Japan Synchrotron Radiation Research Inst.)

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