Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[12p-S203-1~13] 6.3 Oxide electronics

Sun. Sep 12, 2021 1:00 PM - 4:30 PM S203 (Oral)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

△ [12p-S203-1] Correlation between resistive and electronic states of Resistive Random Access Memory

〇(M2)Kota Sugawara^1,2, Hiroshi Suga^1,2, Yasuhisa Naitoh¹, Hisashi Shima¹, Hiroyuki Akinaga¹ (1.AIST, 2.Chiba Tech)

1:15 PM - 1:30 PM

△ [12p-S203-2] Resistive switching and neuromorphic function of Pt/Ti_0.96Co_0.04O_2-δ/Pt thin films

〇(M1)Tomoasa Takada¹, Fukusima Yosiaki¹, Tsuchiya Takashi², Higuchi Tohru¹ (1.Tokyo Univ. Sci., 2.NIMS)

1:30 PM - 1:45 PM

△ [12p-S203-3] Effect of impurity in Pt electrode on the clossal electroresistance in Pt/Nb:SrTiO3 Schottky junctions

〇Taisei Murakami^1,2, Takeo Ohsawa¹, Takamasa Ishigaki², Naoki Ohashi¹ (1.NIMS, 2.Hosei univ.)

1:45 PM - 2:00 PM

△ [12p-S203-4] Oxygen composition dependence of forming characteristics in Pt/TaO_x/Ta₂O₅/Pt resistive switching cells

〇(DC)Toshiki Miyatani¹, Kimoto Tsunenobu¹, Nishi Yusuke^1,2 (1.Kyoto Univ., 2.NIT Maizuru College)

2:00 PM - 2:15 PM

△ [12p-S203-5] Reduction in initial reset voltages of resistive switching cells with a Ti/Pr_0.7Ca_0.3MnO_x interface

〇Makoto Imuro¹, Tsunenobu Kimoto¹, Yusuke Nishi^1,2 (1.Kyoto Univ., 2.NIT Maizuru College)

2:15 PM - 2:30 PM

△ [12p-S203-6] Improvement of ReRAM characteristics by insertion of SiO_x layer at the ZrO_x/electrode interfaces

〇(M2)Keito Touyama¹, Ryusuke Akiyama¹, Kento yuki¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

2:30 PM - 2:45 PM

▼ [12p-S203-7] Reversible Redox Control of Optoelectronic Properties of Hexagonal Tungsten Oxide Epitaxial Films Grown on YSZ Solid Electrolyte

〇(DC)GOWOON KIM¹, Hai Jun Cho², Hiromichi Ohta² (1.IST-Hokkaido University, 2.RIES-Hokkaido University)

2:45 PM - 3:00 PM

△ [12p-S203-8] Li-ion intercalation to LiV₂O₄ epitaxial films and in-situ structural analysis

〇Tatsuya Yajima¹, Takuto Soma¹, Akira Ohtomo^1,2 (1.Tokyo Tech, 2.MCES)

3:15 PM - 3:30 PM

△ [12p-S203-9] High speed resistive switching in Ca₂RuO₄ thin films driven by the current-induced metal-insulator transition

〇Keiji Tsubaki¹, Atsushi Tsurumaki-Fukuchi¹, Yasuo Takahashi¹, Takayoshi Katase², Toshio Kamiya², Masashi Arita¹ (1.IST, Hokkaido Univ., 2.MSL, Tokyo Tech.)

3:30 PM - 3:45 PM

▼ [12p-S203-10] High-Temperature Thermoelectric Figure of Merit of Ba_1/3CoO₂ Epitaxial Films

〇(P)Xi Zhang¹, Yuqiao Zhang¹, Liao Wu², Hai Jun Cho¹, Hiromichi Ohta¹ (1.RIES Hokkaido Univ., 2.IST Hokkaido Univ.)

3:45 PM - 4:00 PM

△ [12p-S203-11] Fabrication of Epitaxial InSb Thin Film on Various Perovskite Oxide Substrates

〇Koomok Lee¹, Kei Shigematsu^1,2, Masaki Azuma^1,2 (1.MSL TokyoTech., 2.KISTEC)

4:00 PM - 4:15 PM

△ [12p-S203-12] Effect of excimer VUV-light on structure and properties of epitaxial NiO thin films

〇(M2)Kenta Kaneko¹, Hiroki Shoji¹, Tomoaki Oga¹, Satoru Kaneko^2,1, Mamoru Yoshimoto¹, Akifumi Matsuda¹ (1.Tokyo Tech, 2.KISTEC)

4:15 PM - 4:30 PM

△ [12p-S203-13] Fabrication of p-type transparent SnO films and examination of sulfurization process with using solution reactions

〇Suguri Uchida¹, Takuto Soma¹, Akira Ohtomo^1,2 (1.Tokyo Tech., 2.MCES)

Session information

[12p-S203-1~13] 6.3 Oxide electronics

△ [12p-S203-1] Correlation between resistive and electronic states of Resistive Random Access Memory

△ [12p-S203-2] Resistive switching and neuromorphic function of Pt/Ti_0.96Co_0.04O_2-δ/Pt thin films

△ [12p-S203-3] Effect of impurity in Pt electrode on the clossal electroresistance in Pt/Nb:SrTiO3 Schottky junctions

△ [12p-S203-4] Oxygen composition dependence of forming characteristics in Pt/TaO_x/Ta₂O₅/Pt resistive switching cells

△ [12p-S203-5] Reduction in initial reset voltages of resistive switching cells with a Ti/Pr_0.7Ca_0.3MnO_x interface

△ [12p-S203-6] Improvement of ReRAM characteristics by insertion of SiO_x layer at the ZrO_x/electrode interfaces

▼ [12p-S203-7] Reversible Redox Control of Optoelectronic Properties of Hexagonal Tungsten Oxide Epitaxial Films Grown on YSZ Solid Electrolyte

△ [12p-S203-8] Li-ion intercalation to LiV₂O₄ epitaxial films and in-situ structural analysis

△ [12p-S203-9] High speed resistive switching in Ca₂RuO₄ thin films driven by the current-induced metal-insulator transition

▼ [12p-S203-10] High-Temperature Thermoelectric Figure of Merit of Ba_1/3CoO₂ Epitaxial Films

△ [12p-S203-11] Fabrication of Epitaxial InSb Thin Film on Various Perovskite Oxide Substrates

△ [12p-S203-12] Effect of excimer VUV-light on structure and properties of epitaxial NiO thin films

△ [12p-S203-13] Fabrication of p-type transparent SnO films and examination of sulfurization process with using solution reactions

Authenticate

Session information

[12p-S203-1~13] 6.3 Oxide electronics

△ [12p-S203-1] Correlation between resistive and electronic states of Resistive Random Access Memory

△ [12p-S203-2] Resistive switching and neuromorphic function of Pt/Ti0.96Co0.04O2-δ/Pt thin films

△ [12p-S203-3] Effect of impurity in Pt electrode on the clossal electroresistance in Pt/Nb:SrTiO3 Schottky junctions

△ [12p-S203-4] Oxygen composition dependence of forming characteristics in Pt/TaOx/Ta2O5/Pt resistive switching cells

△ [12p-S203-5] Reduction in initial reset voltages of resistive switching cells with a Ti/Pr0.7Ca0.3MnOx interface

△ [12p-S203-6] Improvement of ReRAM characteristics by insertion of SiOx layer at the ZrOx/electrode interfaces

▼ [12p-S203-7] Reversible Redox Control of Optoelectronic Properties of Hexagonal Tungsten Oxide Epitaxial Films Grown on YSZ Solid Electrolyte

△ [12p-S203-8] Li-ion intercalation to LiV2O4 epitaxial films and in-situ structural analysis

△ [12p-S203-9] High speed resistive switching in Ca2RuO4 thin films driven by the current-induced metal-insulator transition

▼ [12p-S203-10] High-Temperature Thermoelectric Figure of Merit of Ba1/3CoO2 Epitaxial Films

△ [12p-S203-11] Fabrication of Epitaxial InSb Thin Film on Various Perovskite Oxide Substrates

△ [12p-S203-12] Effect of excimer VUV-light on structure and properties of epitaxial NiO thin films

△ [12p-S203-13] Fabrication of p-type transparent SnO films and examination of sulfurization process with using solution reactions

Authenticate

△ [12p-S203-2] Resistive switching and neuromorphic function of Pt/Ti_0.96Co_0.04O_2-δ/Pt thin films

△ [12p-S203-4] Oxygen composition dependence of forming characteristics in Pt/TaO_x/Ta₂O₅/Pt resistive switching cells

△ [12p-S203-5] Reduction in initial reset voltages of resistive switching cells with a Ti/Pr_0.7Ca_0.3MnO_x interface

△ [12p-S203-6] Improvement of ReRAM characteristics by insertion of SiO_x layer at the ZrO_x/electrode interfaces

△ [12p-S203-8] Li-ion intercalation to LiV₂O₄ epitaxial films and in-situ structural analysis

△ [12p-S203-9] High speed resistive switching in Ca₂RuO₄ thin films driven by the current-induced metal-insulator transition

▼ [12p-S203-10] High-Temperature Thermoelectric Figure of Merit of Ba_1/3CoO₂ Epitaxial Films