The 82nd JSAP Autumn Meeting 2021

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Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[10p-N202-1~19] 15.5 Group IV crystals and alloys

Fri. Sep 10, 2021 1:30 PM - 6:30 PM N202 (Oral)

Masashi Kurosawa(Nagoya Univ.), Kaoru Toko(Univ. of Tsukuba)

1:30 PM - 1:45 PM

[10p-N202-1] Rapid trench-filling growth of Ge epitaxial layer on Si

Kazuki Motomura1, 〇Kota Kato1, Piedra-Lorenzana Jose A.1, Bin Amin Mohd Faiz1, Takeshi Hizawa1, Tetsuya Nakai2, Yasuhiko Ishikawa1 (1.Toyohashi Univ., 2.SUMCO Corporation)

Keywords:Ge on Si, Trench-filling growth