The 82nd JSAP Autumn Meeting 2021

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Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[10p-N202-1~19] 15.5 Group IV crystals and alloys

Fri. Sep 10, 2021 1:30 PM - 6:30 PM N202 (Oral)

Masashi Kurosawa(Nagoya Univ.), Kaoru Toko(Univ. of Tsukuba)

1:45 PM - 2:00 PM

▲ [10p-N202-2] Ge epitaxial layer with a low dislocation density grown on arrayed SOI strips

〇(M1)FAIZ FAIZ MOHD1, Kazuki Motomura1, Takeshi Hizawa1, Jose A. Piedra-Lorenzana1, Tetsuya Nakai2, Yasuhiko Ishikawa1 (1.Toyohashi Univ, 2.SUMCO Corporation)

Keywords:Dislocation density, Selective epitaxial growth, Ge on Si