[10p-N202-1~19] 15.5 IV族結晶，IV-IV族混晶

▲ [10p-N202-2] Ge epitaxial layer with a low dislocation density grown on arrayed SOI strips

〇(M1)FAIZ FAIZ MOHD¹、Kazuki Motomura¹、Takeshi Hizawa¹、Jose A. Piedra-Lorenzana¹、Tetsuya Nakai²、Yasuhiko Ishikawa¹ (1.Toyohashi Univ、2.SUMCO Corporation)

キーワード：Dislocation density, Selective epitaxial growth, Ge on Si