[10p-N202-1~19] 15.5 Group IV crystals and alloys

△ [10p-N202-8] Band-Edge PL Emission from Unstrained GeSn (Sn 9%)

〇Cali Shizuru Matsunaga¹, Ryo Yokogawa^1,2, Yuta Satake¹, Gai Ogasawara¹, Yosuke Shimura^3,4, Roger Loo⁵, Anurag Vohra^5,6, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.Shizuoka Univ., 4.RIE Shizuoka Univ., 5.imec, 6.K. U. Leuven)

Keywords:GeSn, photoluminescence, band-edge emission

Ge has attracted great interest due to its accessibility of the direct bandgap material. Incorporated with Sn and/or tensile strain, Ge shrinks its band gap energy. Since this shrinkage enhances light emitting efficiency, GeSn is expected to be used in the applications of optoelectronic devices operating in near- and mid-infrared in Si photonics. The critical point where GeSn becomes direct bandgap material has been predicted by many researchers, however, many of whom have studied GeSn samples with strains. In order to separate the effects of Sn and strain, we have prepared an unstrained GeSn. In this presentation, the band-edge PL emission of the unstrained GeSn with Sn composition of 9% will be reported.