[10p-N302-1~15] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[10p-N302-13] Research on imaging technology for transient thermal diffusion processes in Si Wafers by Optical-Interference Contactless Thermometry (OICT)

〇(M1)Kotaro Matsuguchi¹, Keiya Fujimoto¹, Jiawen Yu¹, Hiroaki Hanafusa¹, Takuma Sato¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Keywords:Silicon, Temperature measurement

Our laboratory has developed an optical-interference contactless thermometry (OICT) [1] that measures temperature changes during ultra-rapid heat treatment of silicon wafers using an infrared probe laser. In this research, we designed and produced an imaging measurement system that captures interference fringes in two dimensions by replacing the conventional light reflecting light measurement unit with a photodiode with a high-speed camera (HSC), and the heat diffusion process inside the silicon wafer. I tried to visualize.