Growth Kinetics of the Laser Crystallized (100)-Oriented Grain-Boundary-Free Si Film

Nobuo Sasaki; Muhammad Arif; Satoshi Takayama; Yukiharu Uraoka

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[10p-N302-1~15] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Fri. Sep 10, 2021 1:30 PM - 5:45 PM N302 (Oral)

Wenchang Yeh(Shimane Univ.), Taizoh Sadoh(Kyushu Univ.)

1:45 PM - 2:00 PM

[10p-N302-2] Growth Kinetics of the Laser Crystallized (100)-Oriented Grain-Boundary-Free Si Film

〇Nobuo Sasaki^1,2, Muhammad Arif², Satoshi Takayama², Yukiharu Uraoka² (1.Sasaki Consulting, 2.NAIST)

Keywords:laser crystallization, crystal orientation, solid-liquid interface

The crystal growth kinetics of the CW-laser crystallized (100)-oriented grain-boundary free Si film is explained by the fine-structure of the solid-liquid interface and the torque between the solid-liquid interface and the isothermal plane.