Improvement of interface uniformity and homogeneity of electrical conduction property for epitaxial HfGe<sub>2</sub>/<em>n</em>-Ge(001) contact by microfabrication

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Fri. Sep 10, 2021 1:30 PM - 5:45 PM N302 (Oral)

Wenchang Yeh(Shimane Univ.), Taizoh Sadoh(Kyushu Univ.)

3:30 PM - 3:45 PM

〇Kentaro Kasahara¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:germanium, contact resistivity, HfGe2