[10p-N303-1~19] 13.8 Optical properties and light-emitting devices

[10p-N303-18] Relationship between carrier concentration and IR absorption in Mg₂Si crystals

〇Hiroto Tsuchida¹, Naoki Mizunuma¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:Mg2Si, IR absorption, FTIR

We have reported the possibility of easily estimating the carrier concentration from the optical absorption peak value around 0.4 eV in n-type Mg₂Si. However, the carrier concentrations of the samples used in the previous reports were biased, and the absorption values were insufficiently investigated in a specific range. In order to investigate the relationship between the carrier concentration and the infrared absorption of n-type Mg₂Si in more detail, we report here the evaluation of the optical absorption at 0.4 eV of Mg₂Si crystals with various carrier concentrations.