The 82nd JSAP Autumn Meeting 2021

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[10p-N323-1~12] 13.3 Insulator technology

Fri. Sep 10, 2021 1:00 PM - 4:15 PM N323 (Oral)

Keisuke Yamamoto(Kyushu Univ.), Yuuichiro Mitani(Tokyo City University)

3:00 PM - 3:15 PM

[10p-N323-8] LPCVD SiN Film Breakdown and N2-anneal Temperature(Ⅰ)TDDB and ESR Evaluations

〇HISATSUGU KURITA1, MASATAKA NAKAMURA1, HAYATO MIYAGAWA2, YOSHIAKI KAMIGAKI3 (1.ROHM Hamamatsu., 2.Kagawa Univ., 3.E&B Research Lab.)

Keywords:SiN, TDDB, ESR

Effect of annealing temperature on SiN film capacitors breakdown were investigated. In this study, SiN film breakdown frequency was electrically characterized by the time dependent dielectlic breakdown (TDDB) test methods. Defects in SiN film was investigated using an Electron Spin Resonance (ESR).