[10p-S202-1~14] 15.6 Group IV Compound Semiconductors (SiC)

[10p-S202-10] Influence of impurities on semi-insulating characteristics of V doped 4H-SiC epi layers

〇Kazutoshi Kojima¹, Shin-ichiro Sato², Takeshi Ohshima², SHin-Ichiro Kuroki³, Hiroshi Yamaguchi¹ (1.AIST, 2.QST, 3.Hiroshima Univ.)

Keywords:SiC, semi insulating, impurity

In this study, we aim at applying vanadium(V) doped semi insulating 4H-SiC epitaxial layer to 4H-SiC CMOS structure or interlayer insulator of SiC devices, and focused on doner or acceptor that vanadium traps and investigated the difference of semi insulating characteristics between V-doped n-type layers and p-type layers. As the result, V-doped n-type layers easy showed higher resistivity than V-doped p-type layers.