[10p-S202-1~14] 15.6 Group IV Compound Semiconductors (SiC)

[10p-S202-13] Design and verification of gas distributor for 4H-SiC wafer etching

〇Masaya Hayashi¹, Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama National Univ., 2.KANTO DENKA KOGYO, 3.AIST)

Keywords:4H-SiC, wafer etching, chlorine trifluoride gas

Since silicon carbide (SiC) crystals used for power control semiconductor devices and so on are extremely hard, it is desirable to develop a technology for fast and uniform etching by chemical reaction. In our previous paper, we showed that the etching rate distribution by chlorine trifluoride gas depends on the overall and local gas flow, and proposed the design of a system that can etch the entire SiC wafer quickly. In this study, we designed, fabricated, and verified a gas distributor that can realize extremely uniform etching rate distribution.