[10p-S202-1~14] 15.6 Group IV Compound Semiconductors (SiC)

[10p-S202-14] SiC CVD reactor cleaning using low concentration ClF3 gas

Takumi Mamyouda¹, 〇Yuika Takizawa¹, Hitoshi Habuka¹, Akio Ishiguro², Shigeaki Ishii², Yoshiaki Daigo², Hideki Ito², Ichiro Mizushima², Yoshinao Takahashi³ (1.Yokohama National Univ., 2.NuFlare Technology, 3.KANTO DENKA KOGYO)

Keywords:Silicon carbide CVD, Reactor cleaning

For developing the cleaning method of SiC CVD reactor, the chlorine fluoride gas at the lower concentrations than 1% was used. The cleaning using the detaching of the SiC layer from the susceptor was shown to be possible.