[11a-N205-1~11] CS.9 Code-sharing Session of 6.1 & 13.3 & 13.5

[11a-N205-1] [Highlight]Nondestructive analysis of ferroelectric Hf_0.5Zr_0.5O₂ capacitors by laser-based photoelectron emission microscopy

〇Hirokazu Fujiwara¹, Toshiyuki Taniuchi², Cedric Bareille², Masaharu Kobayashi³, Shik Shin^2,4 (1.ISSP, 2.MIRC, 3.d.lab, 4.The Univ. of Tokyo)

Keywords:ferroelectrics, capacitors, nondestructive analysis

The rearrangement of oxygen vacancies has been proposed as a cause of the characteristic fluctuation in ferroelectric capacitors based on Hf_0.5Zr_0.5O₂ (HZO) when AC stress is applied. In this study, we performed photoelectron emission microscopy (PEEM) on TiN/HZO/TiN capacitors in order to directly observe the oxygen vacancy distribution in HZO nondestructively through the electrodes. From the experimental results, we observed two different-size inhomogeneity, about 30 nm and about 200 nm. The latter has not been observed in SEM images, indicating that PEEM may provide information that cannot be obtained by SEM.