The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[11a-N302-1~11] 17.3 Layered materials

Sat. Sep 11, 2021 9:00 AM - 12:00 PM N302 (Oral)

Ryo Kitaura(Nagoya Univ.)

9:45 AM - 10:00 AM

[11a-N302-4] Synthesis of 2D MoS2 and WS1-xSex thin films by Mist-CVD

〇(D)Abdul A Kuddus1, Arifuzzaman Rajib1, Kizaki Ryotaro1, Yokoyama Kojun1, Keiji Ueno1, Hajime Shirai1 (1.Saitama University)

Keywords:Monolayer MoS2, Mist-CVD, MIS-FET

We have studied the synthesis of 2D MoS2 atomic layer thin films by mist CVD from ammonium tetrathiomolybdate (NH4)2MoS4 using layer by layer (LbL) method. Previously, we presented (1) the number of stacking layers of MoS2 flakes under the LbL mode was varied from atomic mono layer to 4 to 5 layers by varying t2, repetition cycles of precursor mist supply N, and solution precursors concentration. (2) The average size of atomic MoS2 monolayer flakes deposited using LbL mode on th-SiO2 and ATO dielectric layers increased to 20 to 30 and 60 to70 µm, respectively with relatively uniform size distribution. (3) Atomic MoS2 monolayer-based FETs exhibited a mobility of 31 to 40 (43 to 55) cm2/Vs with a Vth of -1.6 (-0.5 V), an on/off ratio of 3.0 × 10^4 (3.5 × 10^5), and SS of 0.80 (0.11) V per dec. for th-SiO2 (ATO) gate insulator layers without mechanical exfoliation [1]. In this study, we attempt to further increase in the crystalline grain size of MoS2 flake and extend the fabrication of WS2 based ternary alloy, WS1-xSex thin layers by LbL method.