[11a-N305-1~11] 13.7 Compound and power devices, process technology and characterization

[11a-N305-8] Investigation of process damage on GaN surface by using PL and XPS

〇Takumi Yonemura¹, Yoshihiro Saito¹ (1.Sumitomo Electric)

Keywords:GaN, PL, XPS

In the GaN device fabrication, the ashing process is thought to cause some damages such as defects and composition deviation, to the semiconductor surface. Though the damages may result in the characteristic deviation and reliability deterioration of the devices, it is difficult to analyze them directly, since they are very slight change in the near surface region. In this study, we have developed new analysis techniques, combining photoluminescence and x-ray photoelectron spectroscopy, in order to clarify the mechanism of the damage generation on the GaN surface.