[11a-S301-1~7] Atomic layer processes for future device fabrication; Understanding surface reaction dynamics and its control

[11a-S301-3] Basics of ALD (Atomic Layer Deposition) and application to semiconductor devices

〇Yukiharu Uraoka¹, Mutsunori Uenuma¹ (1.NAIST)

Keywords:Atomic Layer Deposition, Semiconductor, Thin Film

The ALD (Atomic Layer Deposition) method, which enables precise deposition at the atomic level, has been widely used for applications in fine LSIs, thin film transistors, power devices, and the like. Furthermore, attention is also increasing to the formation of ultra-high density semiconductor devices for new applications such as AI (artificial intelligence). In this lecture, we will introduce from the basics of ALD deposition method to application examples.