〇Sumiko Fujisaki¹, Yoshihide Yamaguchi¹, Hiroyuki Kobayashi¹, Kazunori Shinoda¹, Masaki Yamada¹, Hirotaka Hamamura¹, Kohei Kawamura², Masaru Izawa² (1.Hitachi, Ltd., R&D group, 2.Hitachi High-Tech)

Symposium (Oral)

[11p-S301-1~7] Atomic layer processes for future device fabrication; Understanding surface reaction dynamics and its control

Sat. Sep 11, 2021 1:30 PM - 4:55 PM S301 (Oral)

Makoto Sekine(Nagoya Univ.), Jaeho Kim(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[11p-S301-1] Analysis of Surface Reactions Induced by Excited Atom and Aligned O₂ beam

〇Mitsunori Kurahashi¹ (1.NIMS)

2:00 PM - 2:30 PM

[11p-S301-2] Structural-Controlled Synthesis of Atomically Thin Layered Materials and Application of Machine Learning

〇Toshiaki Kato¹, Toshiro Kaneko¹ (1.Tohoku Univ.)

2:30 PM - 3:00 PM

[11p-S301-3] Exploration of Topological Quantum Materials: Expectations for the Atomic Layer Process

〇Takao Sasagawa¹ (1.Tokyo Tech.)

3:15 PM - 3:45 PM

[11p-S301-4] Moving from reactive ion etching to atomic layer etching

〇Kazuo Nojiri¹ (1.Nanotech Research)

3:45 PM - 4:15 PM

[11p-S301-5] Development of state-of-the-art atomic-level process and future outlook

〇Masanobu Honda¹, Takayuki Katsunuma¹, Sho Kumakura¹, Yoshihide Kihara¹ (1.Tokyo Electron Miyagi)

4:15 PM - 4:45 PM

[11p-S301-6] Status and prospects of atomic layer etching

〇Masanaga Fukasawa¹ (1.Sony Semiconductor Solutions)

4:45 PM - 4:55 PM

[11p-S301-7] Closing

〇Kazunori Koga^1,2 (1.Kyushu Univ., 2.NINS)

Sessions

Symposium » Atomic layer processes for future device fabrication; Understanding surface reaction dynamics and its control

[11a-S301-1~7] Atomic layer processes for future device fabrication; Understanding surface reaction dynamics and its control

[11a-S301-1] Introduction

[11a-S301-2] Control and application of ALD/ALE process selectivity

[11a-S301-3] Basics of ALD (Atomic Layer Deposition) and application to semiconductor devices

[11a-S301-4] Examination of Co-ALD for next-generation high-reliable interconnects

[11a-S301-5] Process design of atomic layer etching and the control of elementary reactions

[11a-S301-6] Surface reactions induced by low-energy ion irradiation in atomic layer processes

[11a-S301-7] Thermal-cyclic atomic layer etching of cobalt via oxide and organometallic complex