[11p-N302-1~13] 17.3 Layered materials

[11p-N302-8] Effect of fluorine plasma treatment on multilayer MoS₂ analyzed by field-effect transistor characteristics

〇(M1)Hiroki Kii¹, Ryo Nouchi^1,2 (1.Osaka Prefecture Univ., 2.JST-PRESTO)

Keywords:transition metal dichalcogenide, surface treatment, Schottky contact

MoS₂ is an archetypal layered semiconductor and a representative material of the transition metal dichalcogenide family. Considering that the flakes exfoliated from natural crystals often show normally-on n-type characteristics, we conducted a fluorine plasma treatment, which is expected to have a p-type doping effect. A detailed analysis of the characteristics of the field-effect transistors before and after the treatment showed that the threshold voltage of the n-type channel changes in dependence on the drain voltage only after the treatment. This shift is attributable to the partial depinning of the Fermi level due to the interfacial diffusion of the plasma constituent elements at the electrode junction.