2:00 PM - 2:15 PM
[11p-N304-3] Reactive Ion Etching Property of Mg2Si Substrate Using CF4
Keywords:Magnesium silicide, Photodiode, Reactive Ion Etching
We have been developing Mg2Si-pn junction photodiodes (PDs) that can be mass-produced at low cost. In order to fabricate PDs with two-dimensional array structures, microfabrication using reactive ion etching (RIE) is indispensable. We have previously reported that RIE with SF6 and CF4, which are highly compatible with the silicon process, can be used for etching, and that the etching rate of CF4 is 20% faster than that of SF6. In this study, we report on the RF power dependence of the etching rate and the surface condition after etching in RIE with CF4.