The 82nd JSAP Autumn Meeting 2021

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Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[12a-N102-1~9] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Sun. Sep 12, 2021 9:00 AM - 11:30 AM N102 (Oral)

Mitsuhiro Omura(Kioxia corporation), Kazuo Takahashi(Kyoto Inst. of Tech.)

9:00 AM - 9:15 AM

[12a-N102-1] Etching of Lead using Atmospheric-Pressure Argon Plasma Jet

〇Iori Hirashima1, Hiroshi Kuwahata1 (1.Tokai Univ.)

Keywords:Etching, atmospheric-pressure plasma

An atmospheric-pressure argon (Ar) plasma jet was generated with a frequency of 10 kHz, an applied voltage of 10 kV, and an Ar gas flow rate of 10 L/min.When a lead was irradiated the Ar plasma jet for 5 min, lead was etched ring-shaped with an inner diameter of 5 mm and an outer diameter of 6 mm for irradiation distance of 2 mm.The most etch rate was 1 μm/min.