[12a-N304-1~11] 13.5 デバイス／配線／集積化技術

▲ [12a-N304-5] Performance improvement of Si_0.8Ge_0.2/SOI p-FinFETs by ultrathin Y₂O₃ gate stacks with TMA treatment

〇(D)TsungEn Lee¹、Shao-Tse Huang²、Chiung-Yi Yang²、Kasidit Toprasertpong¹、Mitsuru Takenaka¹、Yao-Jen Lee²、Shinichi Takagi¹ (1.Univ. of Tokyo、2.TSRI)

キーワード：SiGe, high-k, FinFET

An ultrathin equivalent oxide thickness (EOT) SiGe gate stack with a superior high-k/SiGe MOS interface has been fabricated by TiN/1.9-nm-thick Y₂O₃ films with trimethylaluminum (TMA) treatment. The ultrathin Y₂O₃/SiGe MOS interfaces with the TMA treatment is found to exhibit low D_it and gate leakage current. The proposed gate stacks have been successfully employed to Si_0.8Ge_0.2/SOI p-FinFETs with gate length (L_G) at 40 nm. 24% improvement in maximum transconductance (g_m) of a Y₂O₃-based Si_0.8Ge_0.2 p-FinFET, compared to a Si pFinFET with a same EOT gate stack, is demonstrated.