[12a-N323-1~8] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[12a-N323-7] Investigation of the Relationship between the MOSFET Structure of minimal Fab and
the Characteristics of the Operation Amp

〇Takeshi Hamamoto¹, Masashi Kase², Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.MINIMAL, 2.AIST)

Keywords:semiconductor, device

In this presentation, we will discuss about the operational amplifier as a typical analog device. And as a minimal fab transistor structure, the transistor characteristics and operational amplifier characteristics of Bulk CMOS whose substrate is a silicon wafer and SOI CMOS whose substrate is SOI (Silicon on Insulator) make a comparison. The CMOS device itself has been fabricated for both Bulk / SOI, but the operational amplifier for Bulk CMOS is completed. The operational amplifier characteristics, therefore, were compared by SPICE simulation.