[12p-N102-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[12p-N102-11] Effect of high-density nitrogen radical irradiation on molecular beam epitaxy growth of high In-content InGaN

〇Hiroki Kondo¹, Kiyoshi Kuwahara², Dhasiyan Arun Kumar¹, Masaru Hori¹ (1.Nagoya Univ. Low-temp. Plasma, 2.KATAGIRI Eng.)

Keywords:Nitrogen radical, InGaN, Molecular Beam Epitaxy

Employing a high-density radical source (HDRS), which can generate 10 times higher-density nitrogen radicals compared to general inductively coupled plasma sources (ICP), InGaN with In-content of 40-42% was grown by molecular beam epitaxy on Si substrate with GaN template at 447 to 554 deg. C. With increasing the growth temperature, the Mosaicity of InGaN was lower. This indicates that decomposition and elimination of InN was suppressed by the high-density nitrogen radical irradiation, and crystallinity of InN was improved by the higher temperature growth.