[12p-N102-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[12p-N102-15] Study on growth of high crystalline silicon film by instantaneous heating during deposition of silicon film by plasma CVD

〇(M2)Taishi Nojima¹, Hiroaki Hanafusa¹, Takuma Sato¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Keywords:plasma CVD, Thin Film Transistor, polycrystalline silicon

In recent years, with the increase in definition of flat panel displays, high crystalline Si TFTs have required. Many methods for depositing a polycrystalline Si film on an insulator have been studied, but there is a problem that it is not suitable for a bottom gate structure TFT channel because it is difficult to suppress an amorphous incubation layer. Therefore, in this research, we are developing a process to grow a high crystalline Si film by passing an electric current through the metal thin film and heating it with pulse joules when the Si film is deposited by the plasma CVD.