[12p-N205-1~14] 12.4 有機EL・トランジスタ

▼ [12p-N205-6] Vertical organic field-effect transistors using reduced solution-processed graphene oxide films

〇(D)KUN QIAO¹、Mitsuharu Suzuki¹、Ken-ichi Nakayama¹ (1.Osaka Univ.)

キーワード：vertical organic field effect transisitors, reduced graphene oxide

Here, we proposed a promising method to prepare the ultrathin reduced graphene oxide (rGO) film by spincoating graphene oxide (GO) dispersion. The obtained rGO film could be effectively applied as gate tunable electrode in vertical organic field effect transistors (VOFETs). The fabricated VOFETs exhibited a good electrical properties, with the highest current on/off ratio exceeding 10⁴ . The maximum current density of 1.42 mA/cm² at V_D= + 5 V and V_G = + 40 V. The use of a simple, solution-processable approach to fabricate the rGO eletrode would open up new opportunities for the future large-scale application in organic electronics.