[13a-N203-1~7] 6.4 Thin films and New materials

▼ [13a-N203-2] Selective fabrication of Ca₂NH and CaNH epitaxial thin films using reactive magnetron sputtering

〇(D)Seoungmin Chon¹, Ryota Shimizu^1,2, Yuki Sugisawa³, Shigeru Kobayashi¹, Kazunori Nishio¹, Markus Wilde⁴, Daiichiro Sekiba³, Katsuyuki Fukutani^4,5, Taro Hitosugi¹ (1.Tokyo Tech, 2.JST-PRESTO, 3.Univ. of Tsukuba, 4.Univ. of Tokyo, 5.JAEA)

Keywords:Mixed anion thin films, Reactive sputtering, phase control

In this presentation, we report the fabrication of two types of Ca-N-H (Ca₂NH and CaNH) epitaxial thin films using reactive magnetron sputtering. Ca₂NH and CaNH thin films are selectively grown by controlling hydrogen partial pressure. Ca₂NH phase is deposited at low hydrogen partial pressure while CaNH phase is deposited at high hydrogen partial pressure. Plasma emission spectra captured during the sputtering suggests that distinct growth mechanism take place depending on the hydrogen partial pressure.