[13a-N203-1~7] 6.4 薄膜新材料

▼ [13a-N203-6] A study of Ar/N₂-sputtering gas pressure on electrical characteristics of LaB_xN_y insulator formed by RF sputtering

〇(D)EUNKI HONG¹、Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

キーワード：Nitrogen-doped LaB6, RF sputtering, Insulator formation

In this study, Ar/N₂-plasma sputtering gas pressure dependence on LaB_xN_y insulator was investigated to improve the dielectric characteristics.The sputtering gas pressure was changed from 0.19 Pa to 0.65 Pa by changing the Ar/N₂ gas flow ratio from 4/2.8 sccm to 14/9.8 sccm. The maximum capacitance of 0.59 mF/cm² and smallest EOT of 4.8 nm were shown at sputtering gas pressure of 0.19 Pa. The D_it was decreased from 6.5×10¹² cm^-2eV^-1 to 3×10¹² cm^-2eV^-1 by decreasing the sputtering gas pressure from 0.65 Pa to 0.19 Pa. It would be promising for organic-based floating-gate memory with low operation voltage.