[13a-N203-1~7] 6.4 Thin films and New materials

△ [13a-N203-7] Epitaxial growth of IMO thin film on YSZ(111) by mist CVD method

〇(M1)Takayuki Ishino¹, Shimazoe Kazuki¹, Nishinaka Hiroyuki¹, Yoshimoto Masahiro¹ (1.Kyoto Inst. Tech.)

Keywords:Tin doped Indium oxide (ITO), mist CVD method, Mo doped indium oxide (IMO)

Indium Tin Oxide (ITO) is the most used material in transparent conductive films because of its high electrical conductivity (~10-4 Ωcm) and visible light transmittance (about 90%). However, when the resistivity of ITO is reduced, the near-infrared transmittance is impaired. Therefore, to achieve low resistivity by increasing mobility rather than increasing carriers, research has been conducted by adding transition metals (Mo, W, Ta, etc.) to In₂O₃. In this paper, we report on the epitaxial thin film growth of IMO (molybdenum-doped indium oxide) using mist CVD method, selecting Mo among them.