The 82nd JSAP Autumn Meeting 2021

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Oral presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[13a-N203-1~7] 6.4 Thin films and New materials

Mon. Sep 13, 2021 9:30 AM - 11:15 AM N203 (Oral)

Takayuki Ishibashi(Nagaoka Univ. of Tech.)

10:45 AM - 11:00 AM

▼ [13a-N203-6] A study of Ar/N2-sputtering gas pressure on electrical characteristics of LaBxNy insulator formed by RF sputtering

〇(D)EUNKI HONG1, Shun-ichiro Ohmi1 (1.Tokyo Inst. of Technology)

Keywords:Nitrogen-doped LaB6, RF sputtering, Insulator formation

In this study, Ar/N2-plasma sputtering gas pressure dependence on LaBxNy insulator was investigated to improve the dielectric characteristics.The sputtering gas pressure was changed from 0.19 Pa to 0.65 Pa by changing the Ar/N2 gas flow ratio from 4/2.8 sccm to 14/9.8 sccm. The maximum capacitance of 0.59 mF/cm2 and smallest EOT of 4.8 nm were shown at sputtering gas pressure of 0.19 Pa. The Dit was decreased from 6.5×1012 cm-2eV-1 to 3×1012 cm-2eV-1 by decreasing the sputtering gas pressure from 0.65 Pa to 0.19 Pa. It would be promising for organic-based floating-gate memory with low operation voltage.