Performance Improvements of P-channel GaN HFETs by ALE using Nitrogen Plasma

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

Mon. Sep 13, 2021 9:00 AM - 11:45 AM N305 (Oral)

Taketomo Sato(Hokkaido Univ.)

10:15 AM - 10:30 AM

〇(M1)Shonosuke Kimura¹, Katsuyuki Miura¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Inst.)

Keywords:GaN HFET, P-channel transistor