[13a-S201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13a-S201-7] Growth of α-In₂O₃ by Mist CVD Using Indium Oxide Powder as Source Precursor

〇Akito Taguchi¹, Kentaro Kaneko², Shizuo Fujita², Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹ (1.Kogakuin Univ., 2.Kyoto Univ.)

Keywords:Mist CVD, indium oxide, residual carrier concentration

α-In₂O₃ films grown by Mist CVD has potential for active element in the electronic devices. However, the α-In₂O₃ has high residual carrier concentration. In this study, α-In₂O₃ films were grown on (0001) α-Al₂O₃ substrates by Mist CVD with In₂O₃ powder as source precursor.