[13p-N101-1~18] 15.4 III-V-group nitride crystals

△ [13p-N101-10] Establishment of high-quality AlN growth method by inversion domain control

〇(M2)Shota Tsuda¹, Takumi Miyagawa¹, Atsushi Tomita¹, Hideki Hirayama^2,3, Yuusuke Takashima^1,2, Yoshiki Naoi^1,2, Kentaro Nagamatsu^1,2 (1.Faculty of Science and Engineering,Tokushima Univ., 2.Institute of Post-LED Photonics, Tokushima Univ., 3.RIKEN)

Keywords:MOVPE, AlN, crystal growth

So far, AlN crystal growth has many problems even when a low-temperature buffer layer is used, such as surface morphology in a thin film state and dislocation collision probability by an increase in film thickness. In this study, the optimum temperature of the buffer layer was observed for the ultra-high temperature AlN growth on the sapphire substrate. As a result, in the initial growth of AlN , the effects of inversion domain formation and oxygen diffusion from sapphire were clarified because the temperature exceeds 700 ℃, which is the branch point of surface nitriding of sapphire.