Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-N101-1~18] 15.4 III-V-group nitride crystals

Mon. Sep 13, 2021 1:00 PM - 6:00 PM N101 (Oral)

Masataka Imura(NIMS), Tomoyuki Tanikawa(Osaka Univ.), Shuhei Ichikawa(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[13p-N101-1] High-Resolution Mass Spectrometry Analysis of the Reactions Between Trimethylgallium and Ammonia in GaN MOVPE Using Hydrogen Isotope Labeling

〇Zheng Ye¹, Shugo Nitta¹, Yoshio Honda^1,2, Markus Pristovsek¹, Hiroshi Amano^1,3,4 (1.IMaSS, Nagoya Univ., 2.IAR, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

1:15 PM - 1:30 PM

[13p-N101-2] Possible Contribution of the Gibbs−Thomson Effect to Filling Nanopipes during Homoepitaxial Growth of GaN

〇Kazuhiro Mochizuki¹, Fumimasa Horikiri², Hiroshi Ohta¹, Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

1:30 PM - 1:45 PM

△ [13p-N101-3] Effect of void shape on internal stress of the nitride layer grown on Si substrates

〇Tomonori Oku¹, Takeshi Momose¹, Yukihiro Shimogaki¹, Momoko Deura¹ (1.The univ. of Tokyo)

1:45 PM - 2:00 PM

△ [13p-N101-4] Optimization of p-GaN growth in a multiple quantum shell device

〇Yoshiya Miyamoto¹, Naoki Sone^1,2, Renji Okuda¹, Weifang Lu¹, Koji Okuno^1,3, Kazuma Ito¹, Shiori Yamamura¹, Yukimi Jinno¹, Nanami Nakayama¹, Sae Katsuro¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.KOITO MANUFACTURING CO., LTD, 3.Toyoda Gosei Co.,Ltd)

2:00 PM - 2:15 PM

[13p-N101-5] Characterizations of impurity doping in GaN crystal using GaInN/GaN multiple-quantum shell/tunnel junction

〇Naoki Sone^1,2, Yoshiya Miyamoto², Renji Okuda², Kazuma Ito², Shiori Yamamura², Yukimi Jinno², Sae Katsuro², Nanami Nakayama², Koji Okuno³, Weifang Lu², Motoaki Iwaya², Tetsuya Takeuchi², satoshi Kamiyama² (1.KOITO CO., LTD., 2.Meijo Univ., 3.TOYODA GOSEI Co., Ltd.)

2:15 PM - 2:30 PM

[13p-N101-6] Growth and characterizaton of Ga_0.83In_0.17N on ScAlMgO₄ substrate

〇Ryo Takahashi¹, Han Dong-Pyo¹, Ryoto Fujiki¹, Keisuke Hozo¹, Ryoya Hiramatsu¹, Kanato Sawai¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Makoto Matsukura², Takahiro Kojima² (1.Meijo Univ., 2.OXIDE Co.)

2:45 PM - 3:00 PM

[13p-N101-7] Growth evolution of polar-plane-free faceted 3D GaN structures

〇Yoshinobu Matsuda¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

3:00 PM - 3:15 PM

△ [13p-N101-8] Development of GaN polarity inversion technology using metalorganic vapor phase epitaxy

〇Tomotaka Murata¹, Tomoyuki Tanikawa¹, Masahiro Uemukai¹, Ryuji Katayama¹ (1.Osaka Univ.)

3:15 PM - 3:30 PM

△ [13p-N101-9] Growth of N-polar AlN using polarity inversion and pulse H₂ etching

〇Kazuya Ataka¹, Lu You¹, Wataru Matsumura¹, Kouki Hanasaku¹, Yongzhao Yao², Yukari Ishikawa², Yoshihiro Sugawara², Daisaku Yokoe², Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ., 2.Japan Fine Ceramics Center)

3:30 PM - 3:45 PM

△ [13p-N101-10] Establishment of high-quality AlN growth method by inversion domain control

〇(M2)Shota Tsuda¹, Takumi Miyagawa¹, Atsushi Tomita¹, Hideki Hirayama^2,3, Yuusuke Takashima^1,2, Yoshiki Naoi^1,2, Kentaro Nagamatsu^1,2 (1.Faculty of Science and Engineering,Tokushima Univ., 2.Institute of Post-LED Photonics, Tokushima Univ., 3.RIKEN)

3:45 PM - 4:00 PM

△ [13p-N101-11] Fabrication of ultra-low dislocation AlN template with tiny pits multilayer structure

〇Ryota Hidaka¹, Ryo Okuno¹, Taketo Kowaki¹, Yongzhao Yao², Yukari Ishikawa², Yoshihiro Sugawara², Daisaku Yokoe², Hideki Hirayama³, Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ, 2.JFCC, 3.RIKEN)

4:00 PM - 4:15 PM

[13p-N101-12] Characterizations of microstructures in AlN hetero-epitaxial films grown by ammonia-free high-temperature MOVPE

〇Xu-Qiang Shen¹, Hirofumi Matsuhata¹, Kazutoshi Kojima¹ (1.AIST)

4:30 PM - 4:45 PM

△ [13p-N101-13] Reduction of pit density and surface roughness in MOVPE growth on OVPE-GaN substrates

〇Shigeyoshi Usami¹, Masayuki Imanishi¹, Junichi Takino², Tomoaki Sumi², Yoshio Okayama², Mihoko Maruyama¹, Masashi Yoshimura³, Masahiko Hata⁴, Masashi Isemura⁵, Yusuke Mori¹ (1.Osaka Univ., 2.Panasonic Corp., 3.ILE, Osaka Univ., 4.Itochu Plastics Inc., 5.Sosho-Ohshin Inc.)

4:45 PM - 5:00 PM

△ [13p-N101-14] Pit reduction of conductive AlInN / GaN DBR with AlGaN composition gradient layer

〇Kana Shibata¹, Yusuke Ueshima¹, Tetsuro Inagaki¹, Shintaro Ueda¹, Tsuyoshi Nagasawa¹, Minori Tanaka¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ.)

5:00 PM - 5:15 PM

△ [13p-N101-15] Temperature dependence on reflectivity spectra of AlInN/GaN DBRs

〇Tsuyoshi Nagasawa¹, Yusuke Ueshima¹, Tetsuro Inagaki¹, Kana Shibata¹, Tetsuya Takeuti¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Makoto Miyoshi² (1.Meijo Univ., 2.Nagoya Institute of Technology)

5:15 PM - 5:30 PM

[13p-N101-16] Growth of UV-C AlGaN Quantum Wells on Annealed Sputtered AlN Template

〇Shoya Ishihara¹, Shigeyuki Kuboya², Kanako Shojiki¹, Kenjiro Uesugi^2,3, Shiyu Xiao², Hideto Miyake^1,3 (1.Grad. Sch. of Eng. Mie Univ., 2.SPORR. Mie Univ., 3.Grad. Sch. of RIS. Mie Univ.)

5:30 PM - 5:45 PM

△ [13p-N101-17] AlGaN Channel Thickness Dependence on Properties of AlGaN Channel HEMTs on High-Temperature Annealed AlN

〇Ryuichi Mori¹, Kenjiro Uesugi^2,3, Shigeyuki Kuboya², Kanako Shojiki¹, Hideto Miyake^1,3 (1.Grad. Sch. of Eng., Mie Univ., 2.SPORR, Mie Univ., 3.Grad. Sch. of RIS, Mie Univ.)

5:45 PM - 6:00 PM

▲ [13p-N101-18] Self-temperature-compensated GaN MEMS resonator through strain engineering

〇Li-wen SANG¹, Huanying SUN¹, Xuelin YANG², Tiefu LI³, Bo SHEN², Meiyong LIAO¹ (1.NIMS, 2.Peking Univ., 3.Tsinghua Univ.)

Session information

[13p-N101-1~18] 15.4 III-V-group nitride crystals

[13p-N101-1] High-Resolution Mass Spectrometry Analysis of the Reactions Between Trimethylgallium and Ammonia in GaN MOVPE Using Hydrogen Isotope Labeling

[13p-N101-2] Possible Contribution of the Gibbs−Thomson Effect to Filling Nanopipes during Homoepitaxial Growth of GaN

△ [13p-N101-3] Effect of void shape on internal stress of the nitride layer grown on Si substrates

△ [13p-N101-4] Optimization of p-GaN growth in a multiple quantum shell device

[13p-N101-5] Characterizations of impurity doping in GaN crystal using GaInN/GaN multiple-quantum shell/tunnel junction

[13p-N101-6] Growth and characterizaton of Ga_0.83In_0.17N on ScAlMgO₄ substrate

[13p-N101-7] Growth evolution of polar-plane-free faceted 3D GaN structures

△ [13p-N101-8] Development of GaN polarity inversion technology using metalorganic vapor phase epitaxy

△ [13p-N101-9] Growth of N-polar AlN using polarity inversion and pulse H₂ etching

△ [13p-N101-10] Establishment of high-quality AlN growth method by inversion domain control

△ [13p-N101-11] Fabrication of ultra-low dislocation AlN template with tiny pits multilayer structure

[13p-N101-12] Characterizations of microstructures in AlN hetero-epitaxial films grown by ammonia-free high-temperature MOVPE

△ [13p-N101-13] Reduction of pit density and surface roughness in MOVPE growth on OVPE-GaN substrates

△ [13p-N101-14] Pit reduction of conductive AlInN / GaN DBR with AlGaN composition gradient layer

△ [13p-N101-15] Temperature dependence on reflectivity spectra of AlInN/GaN DBRs

[13p-N101-16] Growth of UV-C AlGaN Quantum Wells on Annealed Sputtered AlN Template

△ [13p-N101-17] AlGaN Channel Thickness Dependence on Properties of AlGaN Channel HEMTs on High-Temperature Annealed AlN

▲ [13p-N101-18] Self-temperature-compensated GaN MEMS resonator through strain engineering

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Session information

[13p-N101-1~18] 15.4 III-V-group nitride crystals

[13p-N101-1] High-Resolution Mass Spectrometry Analysis of the Reactions Between Trimethylgallium and Ammonia in GaN MOVPE Using Hydrogen Isotope Labeling

[13p-N101-2] Possible Contribution of the Gibbs−Thomson Effect to Filling Nanopipes during Homoepitaxial Growth of GaN

△ [13p-N101-3] Effect of void shape on internal stress of the nitride layer grown on Si substrates

△ [13p-N101-4] Optimization of p-GaN growth in a multiple quantum shell device

[13p-N101-5] Characterizations of impurity doping in GaN crystal using GaInN/GaN multiple-quantum shell/tunnel junction

[13p-N101-6] Growth and characterizaton of Ga0.83In0.17N on ScAlMgO4 substrate

[13p-N101-7] Growth evolution of polar-plane-free faceted 3D GaN structures

△ [13p-N101-8] Development of GaN polarity inversion technology using metalorganic vapor phase epitaxy

△ [13p-N101-9] Growth of N-polar AlN using polarity inversion and pulse H2 etching

△ [13p-N101-10] Establishment of high-quality AlN growth method by inversion domain control

△ [13p-N101-11] Fabrication of ultra-low dislocation AlN template with tiny pits multilayer structure

[13p-N101-12] Characterizations of microstructures in AlN hetero-epitaxial films grown by ammonia-free high-temperature MOVPE

△ [13p-N101-13] Reduction of pit density and surface roughness in MOVPE growth on OVPE-GaN substrates

△ [13p-N101-14] Pit reduction of conductive AlInN / GaN DBR with AlGaN composition gradient layer

△ [13p-N101-15] Temperature dependence on reflectivity spectra of AlInN/GaN DBRs

[13p-N101-16] Growth of UV-C AlGaN Quantum Wells on Annealed Sputtered AlN Template

△ [13p-N101-17] AlGaN Channel Thickness Dependence on Properties of AlGaN Channel HEMTs on High-Temperature Annealed AlN

▲ [13p-N101-18] Self-temperature-compensated GaN MEMS resonator through strain engineering

Authenticate

[13p-N101-6] Growth and characterizaton of Ga_0.83In_0.17N on ScAlMgO₄ substrate

△ [13p-N101-9] Growth of N-polar AlN using polarity inversion and pulse H₂ etching