[22a-P08-1~11] 8 Plasma Electronics(Poster)

[22a-P08-8] Formation of Sponge-like SiO:CH by CCP-CVD using Organosilicon Reactant

〇Yuki Nakaizumi¹, Yasushi Inoue¹, Osamu Takai² (1.Chiba Inst. Technol., 2.Kanto Gakuin Univ.)

Keywords:SiO:CH, CCP-CVD, superficial water repellent

Silica with organic groups (SiO:CH) with surface microstructure has been known to exhibit a super hydrophobic property. We found that a white sponge-like SiO:CH deposited with the height of 6 mm in the deposition time of 15 min due to a localized anomalous acceleration of nanoparticle generation in the SiO:CH deposition process using a CCP-CVD method. The sponge-like deposit was revealed to have a 3-dementional network structure consisting of the SiO:CH nanoparticles polymerized in plasma.