[22p-P01-1~12] 8 Plasma Electronics(Poster)

[22p-P01-12] Low-temperature Formation of High-Mobility IGZO Thin Film Transistors using Reactive Plasma Processes (IV)

〇Kosuke Takenaka¹, Yuji Hayashi¹, Hibiki Komatsu¹, Susumu Toko¹, Giichiro Uchida², Akinori Ebe³, Yuichi Setsuhara¹ (1.Osaka Univ., 2.Meijo Univ., 3.EMD Corp.)

Keywords:IGZO, AOS