9:00 AM - 10:40 AM
[23a-P06-4] Improvement of current drivability for metal S/D Ge n-MOSFET by introduction of recessed channel structure
Keywords:Germanium, mobility
Presentation information
Poster presentation
13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology
[23a-P06-1~5] 13.4 Si processing /Si based thin film / MEMS / Equipment technology
Thu. Sep 23, 2021 9:00 AM - 10:40 AM P06 (Poster)