[23a-P10-1~14] 13.7 化合物及びパワーデバイス・プロセス技術・評価

▲ [23a-P10-6] High-Temperature Reliability at 400℃ of Integrated Electronic Circuit Based on 4H-SiC MOSFET with TiN Metal Gate

〇Cuong Van Vuong¹、Tetsuya Meguro¹、Shin-Ichiro Kuroki¹ (1.RNBS, Hiroshima Uni.)

キーワード：4H-SiC MOSFET, High temperature, Amplifier

In this research, the high-temperature reliability of single stage amplifier based on 4H-SiC MOSFET with TiN metal gate was investigated. After 100-hour aging at 400℃ in nitrogen ambient, the good characteristics of ID-VG and ID-VDS curves indicated that the 4H-SiC MOSFET remained stable during the aging process. Whereas, the stability of the output signal of the amplifier after being aged for 100 hours showed that the 4H-SiC MOSFET with TiN metal gate could be a potential candidate to apply for integrated electronic circuit for harsh environment applications.