[23p-P12-1~11] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

[23p-P12-1] Fabrication of α-Ir₂O₃ thin film using IrBr₃ precursor by mist CVD

〇Tomoharu Akaishi¹, Takashi Shinohe², Kentaro Kaneko¹ (1.Kyoto Univ., 2.FLOSFIA INC.)

Keywords:Iridium oxide, Gallium oxide, wide band gap semiconductor

α-Ir₂O₃ has been gaining attentions as a p-type semiconductor that can be used for heterojunctions with α-Ga₂O₃. In this study, α-Ir₂O₃ thin films were fabricated by mist CVD method using IrBr₃ as a precursor. As a result, IrBr₃ was found to be effective as a precursor to improve the surface condition and the growth rate. The results of Hall and Seebeck measurements showed that the films exhibited p-type conductivity.