Naohisa Inoue

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Speaker, Author, Co-Author

Fri. Mar 19, 2021 9:00 AM - 11:30 AM Z29 (Z29)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[19a-Z29-1~9] 15.7 Crystal characterization, impurities and crystal defects

10:45 AM - 11:00 AM

[19a-Z29-7] Quality of silicon substrate and point defects (5) CiO2i and NN, CO, NO, OO ring

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ.)

11:00 AM - 11:15 AM

[19a-Z29-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (18) Double peaks of nitrogen absorption

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ.)

11:15 AM - 11:30 AM

[19a-Z29-9] Measurement of carbon concentration in silicon crystal
(XXII) Restart of the revision of the SEMI Standard

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Pref. Univ.)