Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[19a-Z29-1~9] 15.7 Crystal characterization, impurities and crystal defects

Fri. Mar 19, 2021 9:00 AM - 11:30 AM Z29 (Z29)

Susumu Maeda(GWJ), Haruo Sudo(GlobalWafers)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[19a-Z29-1] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (I)
-Reduction of SiO₂/Si Interface State using Hydrocarbon-Molecular-Ion-Implanted Wafers-

〇Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

9:15 AM - 9:30 AM

△ [19a-Z29-2] Characteristics of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-stacked CMOS Image Sensors (II)
– In Situ TEM Observation of Thermal Dissolution Behavior of CH₄N Multielement-Molecular-Ion-Implantation-Induced Defects –

〇Akihiro Suzuki¹, Takeshi Kadono¹, Ryo Hirose¹, Koji Kobayashi¹, Ayumi Masada¹, Ryosuke Okuyama¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

9:30 AM - 9:45 AM

△ [19a-Z29-3] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (Ⅲ)
-Gettering Capability in Hybrid Molecular Ion Implanted Range-

〇Ryo Hirose¹, Takeshi Kadono¹, Ayumi Masada¹, Ryosuke Okuyama¹, Koji Kobayashi¹, Akihiro Suzuki¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

9:45 AM - 10:00 AM

[19a-Z29-4] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (IV)
-Dark Current Reduction Mechanism of Molecular Ion Implanted Double Epitaxial Wafers Using Dark Current Spectroscopy-

〇Ayumi Masada¹, Takeshi Kadono¹, Ryosuke Okuyama¹, Ryo Hirose¹, Koji Kobayashi¹, Akihiro Suzuki¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

10:00 AM - 10:15 AM

[19a-Z29-5] Thermal behavior of hydrogen in silicon substrate introduced from SiN film

〇Katsuto Tanahashi¹, Katsuhiko Shirasawa¹, Shunsuke Heito², Hidetaka Takato¹ (1.AIST, 2.KYOCERA)

10:30 AM - 10:45 AM

[19a-Z29-6] Influence for Power Semiconductor Device Properties of Carbon Related Crystal Defect
in Silicon Wafer

〇Shun Sasaki¹, Noritomo Mitsugi¹, Shuichi Samata¹, Masanori Tsukuda², Ichiro Omura² (1.SUMCO Corporation, 2.Kyushu Inst)

10:45 AM - 11:00 AM

[19a-Z29-7] Quality of silicon substrate and point defects (5) CiO2i and NN, CO, NO, OO ring

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ.)

11:00 AM - 11:15 AM

[19a-Z29-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (18) Double peaks of nitrogen absorption

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ.)

11:15 AM - 11:30 AM

[19a-Z29-9] Measurement of carbon concentration in silicon crystal
(XXII) Restart of the revision of the SEMI Standard

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Pref. Univ.)

Session information

[19a-Z29-1~9] 15.7 Crystal characterization, impurities and crystal defects

[19a-Z29-1] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (I)
-Reduction of SiO₂/Si Interface State using Hydrocarbon-Molecular-Ion-Implanted Wafers-

△ [19a-Z29-2] Characteristics of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-stacked CMOS Image Sensors (II)
– In Situ TEM Observation of Thermal Dissolution Behavior of CH₄N Multielement-Molecular-Ion-Implantation-Induced Defects –

△ [19a-Z29-3] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (Ⅲ)
-Gettering Capability in Hybrid Molecular Ion Implanted Range-

[19a-Z29-4] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (IV)
-Dark Current Reduction Mechanism of Molecular Ion Implanted Double Epitaxial Wafers Using Dark Current Spectroscopy-

[19a-Z29-5] Thermal behavior of hydrogen in silicon substrate introduced from SiN film

[19a-Z29-6] Influence for Power Semiconductor Device Properties of Carbon Related Crystal Defect
in Silicon Wafer

[19a-Z29-7] Quality of silicon substrate and point defects (5) CiO2i and NN, CO, NO, OO ring

[19a-Z29-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (18) Double peaks of nitrogen absorption

[19a-Z29-9] Measurement of carbon concentration in silicon crystal
(XXII) Restart of the revision of the SEMI Standard

Authenticate

Session information

[19a-Z29-1~9] 15.7 Crystal characterization, impurities and crystal defects

[19a-Z29-1] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (I)-Reduction of SiO2/Si Interface State using Hydrocarbon-Molecular-Ion-Implanted Wafers-

△ [19a-Z29-2] Characteristics of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-stacked CMOS Image Sensors (II)– In Situ TEM Observation of Thermal Dissolution Behavior of CH4N Multielement-Molecular-Ion-Implantation-Induced Defects –

△ [19a-Z29-3] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (Ⅲ)-Gettering Capability in Hybrid Molecular Ion Implanted Range-

[19a-Z29-4] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (IV)-Dark Current Reduction Mechanism of Molecular Ion Implanted Double Epitaxial Wafers Using Dark Current Spectroscopy-

[19a-Z29-5] Thermal behavior of hydrogen in silicon substrate introduced from SiN film

[19a-Z29-6] Influence for Power Semiconductor Device Properties of Carbon Related Crystal Defectin Silicon Wafer

[19a-Z29-7] Quality of silicon substrate and point defects (5) CiO2i and NN, CO, NO, OO ring

[19a-Z29-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (18) Double peaks of nitrogen absorption

[19a-Z29-9] Measurement of carbon concentration in silicon crystal(XXII) Restart of the revision of the SEMI Standard

Authenticate

[19a-Z29-1] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (I)
-Reduction of SiO₂/Si Interface State using Hydrocarbon-Molecular-Ion-Implanted Wafers-

△ [19a-Z29-2] Characteristics of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-stacked CMOS Image Sensors (II)
– In Situ TEM Observation of Thermal Dissolution Behavior of CH₄N Multielement-Molecular-Ion-Implantation-Induced Defects –

△ [19a-Z29-3] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (Ⅲ)
-Gettering Capability in Hybrid Molecular Ion Implanted Range-

[19a-Z29-4] Characteristic of Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (IV)
-Dark Current Reduction Mechanism of Molecular Ion Implanted Double Epitaxial Wafers Using Dark Current Spectroscopy-

[19a-Z29-6] Influence for Power Semiconductor Device Properties of Carbon Related Crystal Defect
in Silicon Wafer

[19a-Z29-9] Measurement of carbon concentration in silicon crystal
(XXII) Restart of the revision of the SEMI Standard