[16a-Z16-1~11] 13.7 Compound and power electron devices and process technology

[16a-Z16-4] Two-dimensional characterization of n-GaN Schottky contacts formed by printed method using Ni nanoink

〇Yuto Kawasumi¹, Yuto Yasui¹, Yukiyasu kashiwagi², Toshiyuki Tamai², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Osaka Research Inst. of Industrial Science and Technology)

Keywords:Gallium nitride, printed electronics, scanning internal photoemission microscopy

Two-dimensional characterization of n-GaN Schottky contacts formed by printing method using Ni nanoink was performed by scanning internal photoemission microscopy (SIPM). The sample annealed at 400 °C showed a large series resistance and nonuniformity over the electrode. The sample annealed at 500 °C obtained better I-V characteristics with a large qφ_B value of 1.21 eV and better uniformity. The sample annealed at 600 °C lost much of its rectification. SIPM indicated that the printing method using Ni nanoink is a candidate to form Schottky contacts on n-GaN.