[16a-Z16-1~11] 13.7 Compound and power electron devices and process technology

[16a-Z16-5] Electrical Properties of SiO₂/GaN MOS Capacitors Fabricated on GaN(0001) Substrates

Kazuki Tomigahara¹, Yuhei Wada¹, 〇Hidetoshi Mizobata¹, Mikito Nozaki¹, Akitaka Yoshigoe², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.JAEA)

Keywords:N-polar GaN, GaN(0001), SiO2/GaN

Since thermal stability of GaN(0001) surface has higher than that of GaN(0001) surface, GaN(0001) substrates are expected to be applied to activation annealing at higher temperatures after ion implantation. However, there are few reports on the electrical properties of GaN MOS devices fabricated on GaN(0001) substrates, and the insulators and the conditions of post-deposition annealing have not been sufficiently investigated. In this study, we studied the electrical properties of SiO₂/GaN MOS capacitors fabricated on GaN(0001) substrates.