Oral presentation

[16a-Z16-1~11] 13.7 Compound and power electron devices and process technology

Tue. Mar 16, 2021 9:00 AM - 12:00 PM Z16 (Z16)

Kozo Makiyama(Sumitomo Electric Industries, Ltd.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [16a-Z16-1] First-principles calculation study on the atomic and electronic structures at the (Al₂O₃)_1-x(SiO₂)_x/GaN interfaces.

〇Kenta Chokawa¹, Kenji Shiraishi^2,1, Atsushi Oshiyama¹ (1.IMaSS, Nagoya Univ., 2.Eng. Nagoya Univ.)

9:15 AM - 9:30 AM

[16a-Z16-2] Felmi level pinning at Metal/GaN interface

〇Jiro Koba^1,2, Masataka Yahagi^1,2, Junichi Koike¹ (1.Tohoku Univ., 2.JX Nippon Mining & Metals Corporation)

9:30 AM - 9:45 AM

[16a-Z16-3] Dependence of Shcottky barrier height on metal work function for n-type AlN

〇Masanobu Hiroki¹, Yoshitaka Taniyasu¹, Kazuhide Kumakura¹ (1.NTT BRL)

9:45 AM - 10:00 AM

[16a-Z16-4] Two-dimensional characterization of n-GaN Schottky contacts formed by printed method using Ni nanoink

〇Yuto Kawasumi¹, Yuto Yasui¹, Yukiyasu kashiwagi², Toshiyuki Tamai², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Osaka Research Inst. of Industrial Science and Technology)

10:00 AM - 10:15 AM

[16a-Z16-5] Electrical Properties of SiO₂/GaN MOS Capacitors Fabricated on GaN(0001) Substrates

Kazuki Tomigahara¹, Yuhei Wada¹, 〇Hidetoshi Mizobata¹, Mikito Nozaki¹, Akitaka Yoshigoe², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.JAEA)

10:15 AM - 10:30 AM

△ [16a-Z16-6] Investigation of Post-Deposition Annealing Conditions for Improving Interface Property of SiO₂/GaN MOS Devices

〇Hidetoshi Mizobata¹, Yuhei Wada¹, Mikito Nozaki¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

10:45 AM - 11:00 AM

[16a-Z16-7] Crystal face dependence of channel characteristics of GaN UMOS subjected to TMAH treatment

〇Hirohisa Hirai¹, Yoshinao Miura¹, Akira Nakajima¹, Shinsuke Harada¹, Hiroshi Yamaguchi¹ (1.AIST)

11:00 AM - 11:15 AM

[16a-Z16-8] Effect of Nitrogen Plasma Treatment on Characteristics of GaN Trench MOSFETs

〇(M2)KyungPil NAM¹, Takashi Ishida^1,2, Maciej Matys², Tsutomu Uesugi², Tetsu Kachi², Jun Suda^1,2 (1.Nagoya University, 2.IMaSS)

11:15 AM - 11:30 AM

[16a-Z16-9] Analysis of mobility limitation factors in AlSiO/p-type GaN-based MOSFETs

〇Tetsuo Narita¹, Kenji Ito¹, Kazuyosi Tomita², Masahiro Horita², Daigo Kikuta¹ (1.Toyota CRDL., 2.Nagoya Univ.)

11:30 AM - 11:45 AM

[16a-Z16-10] High channel mobility of GaN-MOSFETs with controlled surface

〇Katsunori Ueno¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹ (1.Fuji Electric)

11:45 AM - 12:00 PM

[16a-Z16-11] Accurate estimation of MOS itenrface fixed charge density based on UPS analysis of electric structure of β-Ga₂O₃

〇Daiki Takeda¹, Koji Kita¹ (1.The Univ. of Tokyo)

Oral presentation

[18a-Z15-1~10] 13.7 Compound and power electron devices and process technology

Thu. Mar 18, 2021 9:15 AM - 12:00 PM Z15 (Z15)

Masamichi Akazawa(Hokkaido Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:15 AM - 9:30 AM

[18a-Z15-1] Diffusion of Mg and H atoms in Mg-implanted GaN by ultra-high-pressure annealing

〇Hideki Sakurai^1,2,3, Tetsuo Narita⁴, Kazufumi Hirukawa², Kensuke Sumida², Shinji Yamada^1,2,3, Keita Kataoka⁴, Masahiro Horita^1,2, Nouyuki Ikarashi^1,2, Michal Bockowski^1,5, Jun Suda^1,2, Tetsu Kachi¹ (1.IMaSS, Nagoya Univ., 2.Nagoya Univ., 3.ULVAC ATI, 4.ToyotaCentralR&DLabs, 5.UNIPRESS)

9:30 AM - 9:45 AM

[18a-Z15-2] Evaluation of acceptor activation rate of Mg-ion-implanted GaN by photoluminescence

〇Taisei Miyazaki¹, Maito Shiraish¹, Ryusui Wada¹, Kenta Watanabe², Takashi Okawa², Masato Omor¹ (1.Oita Univ., 2.MIRISE Technologies)

9:45 AM - 10:00 AM

[18a-Z15-3] Implantation of Mg ion into GaN substrate on a channeling condition (IV)

〇Tomoaki Nishimura¹, Kiyoji Ikeda¹, Tetsu Kachi² (1.Hosei Univ., 2.Nagoya Univ.)

10:00 AM - 10:15 AM

[18a-Z15-4] Luminescence studies of p-type Mg-implanted GaN using vacancy-guided Mg diffusion

〇Kohei Shima¹, Ryo Tanaka², Shinya Takashima², Katsunori Ueno², Masaharu Edo², Kazunobu Kojima¹, Akira Uedono³, Shigefusa Chichibu^1,4 (1.IMRAM-Tohoku Univ., 2.Fuji Electric, 3.Univ. of Tsukuba, 4.IMaSS-Nagoya Univ.)

10:15 AM - 10:30 AM

[18a-Z15-5] Photoluminescence study on Mg-ion-implanted GaN with ultra-high-pressure annealing

〇Maito Shiraishi¹, Taisei Miyazaki¹, Ryusui Wada¹, Kenta Watanabe², Takashi Okawa², Masato Omori¹ (1.Oita Univ., 2.MIRISE Technologies)

10:45 AM - 11:00 AM

△ [18a-Z15-6] Effect of recoil-implanted N atoms on defect formation in Mg-implanted GaN

〇(B)Kai C Herbert¹, Kazuki Shibata¹, Joel Asubar², Masaaki Kuzuhara¹ (1.Kwansei Gakuin Univ., 2.Univ. of Fukui)

11:00 AM - 11:15 AM

△ [18a-Z15-7] Effect of beam current on the formation of defects by high-temperature implantation of Mg ions into GaN

〇Yuta Ito¹, Hirotaka Watanabe², Ando Yuto¹, Deki Manato⁴, Kano Emi², Nitta Shogo², Honda Yoshio², Ikarashi Nobuyuki², Tanaka Atsushi^2,3, Amano Hiroshi^1,2,3,4,5 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.NIMS, 4.VBL Nagoya Univ., 5.ARC Nagoya Univ.)

11:15 AM - 11:30 AM

△ [18a-Z15-8] Impact of Schottky barrier height on the detection of deep-levels in n-type GaN by deep-level transient spectroscopy

〇Keito Aoshima¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

11:30 AM - 11:45 AM

[18a-Z15-9] Contribution to electrical properties of carrier recombination of Slow decay in GaN epilayers

〇(M1)Takuto Maeda¹, Takato Asada¹, Kenji Itou², Kazuyoshi Tomita², Tetsuo Narita², Tetsu Kachi³, Masashi Kato^1,3 (1.Nagoya Inst. of Tech., 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ.)

11:45 AM - 12:00 PM

[18a-Z15-10] Electron traps formed by oxygen ion implantation in n-type GaN

〇(M1)Yuichi Shibata¹, Masahiro Horita^1,2, Ryo Tanaka³, Shinya Takashima³, Katsunori Ueno³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Fuji Electric)

Oral presentation

[19a-Z25-1~8] 13.7 Compound and power electron devices and process technology

Fri. Mar 19, 2021 9:30 AM - 11:45 AM Z25 (Z25)

Kenji Shiojima(Univ. of Fukui)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[19a-Z25-1] Temperature dependence of impact ionization coefficients of electrons and holes in GaN

〇Takuya Maeda¹, Tetsuo Narita², Shinji Yamada^3,4, Tetsu Kachi³, Tsunenobu Kimoto¹, Masahiro Horita^1,3,5, Jun Suda^1,3,5 (1.Kyoto Univ., 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ. IMaSS, 4.ULVAC AIT, 5.Nagoya Univ.)

9:45 AM - 10:00 AM

[19a-Z25-2] Electrical characterization of GaN/ScAlN/GaN heterostructure barrier diodes

〇Takuya Maeda¹, Joseph Casamento¹, Kazuki Nomoto¹, Huili Grace Xing¹, Debdeep Jena¹ (1.Cornell University)

10:00 AM - 10:15 AM

[19a-Z25-3] Substrate dependence of current-voltage characteristics in AlGaN/GaN Hall devices

〇Daiki Tanaka¹, Akio Wakejima³, Yuji Ando¹, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Inst. of Tech.)

10:15 AM - 10:30 AM

[19a-Z25-4] Operand analysis of local piezoelectric lattice deformation in AlGaN/GaN HEMT devices by synchrotron radiation nanobeam X-ray diffraction

〇Haruna Shiomi¹, Akihiro Shimada¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Shota Kaneki², Tamotsu Hashizume², Yasuhiko Imai³, Kazushi Sumitani³, Shigeru Kimura³, Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.RCIQE, Hokkaido Univ., 3.JASRI)

10:45 AM - 11:00 AM

[19a-Z25-5] Lowered on-resistance in p-n junction diodes with highly Ge-doped GaN substrate

〇Hiroshi Ohta¹, Naomi Asai¹, Kazuhiro Mochizuki¹, Takehiro Yoshida², Fumimasa Horikiri², Yoshinobu Narita², Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

11:00 AM - 11:15 AM

[19a-Z25-6] Experimental demonstration of GaN IMPATT diode at X-band

〇Seiya Kawasaki¹, Yuto Ando¹, Manato Deki^1,2, Hirotaka Watanabe³, Atsushi Tanaka^3,4, Shugo Nitta³, Yoshio Honda³, Manabu Arai³, Hiroshi Amano^2,3,4,5 (1.Nagoya Univ., 2.VBL, Nagoya Univ., 3.IMaSS, Nagoya Univ., 4.NIMS, 5.ARC, Nagoya Univ.)

11:15 AM - 11:30 AM

[19a-Z25-7] Characterization of GaN vertical npn phototoransistor

〇Ryusui Wada¹, Maito Shiraishi¹, Taisei Miyazaki¹, Masato Omori¹ (1.Oita Univ.)

11:30 AM - 11:45 AM

[19a-Z25-8] Electrical Characteristics of Gated-Anode Diodes using GaN HEMT with Recessed Gate Structure

〇Hidemasa Takahashi¹, Yuji Ando¹, Momoe Shojima³, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Institute of Technology)

Oral presentation

[19p-Z25-1~14] 13.7 Compound and power electron devices and process technology

Fri. Mar 19, 2021 1:00 PM - 4:45 PM Z25 (Z25)

Masashi Kato(Nagoya Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[19p-Z25-1] Electric Properties of GaN channel HEMTs on High Resistivity GaN Substrates

〇Takuya Hoshi¹, Yuki Yoshiya¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs.)

1:15 PM - 1:30 PM

[19p-Z25-2] Fabrication of a 150 nm Gate AlGaN/GaN HEMT Using i-Line Stepper

〇Yuji Ando¹, Hidemasa Takahashi¹, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Institute of Technology)

1:30 PM - 1:45 PM

[19p-Z25-3] Fabrication of recessed-gate AlGaN/GaN HEMTs utilizing contactless photoelectrochemical (CL-PEC) etching (2)

〇(DC)Masachika Toguchi¹, Kazuki Miwa¹, Fumimasa Horikiri², Noboru Fukuhara², Yoshinobu Narita², Osamu Ichikawa², Ryota Isono², Takeshi Tanaka², Taketomo Sato¹ (1.RCIQE, Hokkaido Univ., 2.SCIOCS Co. Ltd.)

1:45 PM - 2:00 PM

[19p-Z25-4] Fabrication of recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching

〇Kosaku Ito¹, Komatsu Yuto¹, Toguchi Masachika¹, Inoue Akiyoshi², Miyoshi Makoto², Sato Taketomo¹ (1.RCIQE, Hokkaido Univ., 2.Nagoya Inst. of Tech.)

2:00 PM - 2:15 PM

△ [19p-Z25-5] Fabrication and characterization of AlGaN channel HFETs with selective-area regrowth ohmic contacts

〇Akiyoshi Inoue¹, Hiroki Harada¹, Mizuki Yamanaka¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech)

2:15 PM - 2:30 PM

△ [19p-Z25-6] Growth and characterization of Al_0.4Ga_0.6N channel 2DEG heterostructures with quaternary AlGaInN barrier layers

〇Sakura Tanaka¹, Aiyoshi Inoue¹, Kosuke Yamamoto¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.NIT)

2:30 PM - 2:45 PM

△ [19p-Z25-7] Fabrication of AlGaN/GaN HBT with Continuous-grown N-p-n Junctions

〇(M2)Takeru Kumabe¹, Yuto Ando¹, Hirotaka Watanabe², Manato Deki^1,3, Atsushi Tanaka⁴, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.NIMS, 5.ARC Nagoya Univ.)

3:00 PM - 3:15 PM

[19p-Z25-8] Performance of heterojunction transistor consisting of GaAs or InGaAs channel with electrons and holes induced by modulation doping

〇(M2)Hiroaki Ogawa¹, Mayu Toyohara¹, Keita Asaka¹, Naotaka Iwata¹ (1.Toyota Tech. Inst.)

3:15 PM - 3:30 PM

[19p-Z25-9] Device Performances and Delay Time Analysis of GaInSb-HEMTs Scaled for Epitaxial Structures

〇Naoyuki Kishimoto¹, Yuto Isomae¹, Takuya Hayashi¹, Munemasa Kunisawa¹, Issei Watanabe^2,1, Yoshimi Yamashita², Ryuto Machida², Shinsuke Hara², Akifumi Kasamatsu², Akira Endoh¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.NICT)

3:30 PM - 3:45 PM

△ [19p-Z25-10] Atomic Layer Selective GaN/SiN Etching by HBr Neutral Beam

〇(M1)Takahiro Sawada¹, Daisuke Ohori¹, Kenta Sugawara³, Masaya Okada³, Ken Nakata³, Kazutaka Inoue³, Daisuke Sato⁴, Seiji Samukawa^1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.Sumitomo Electric Industries, Ltd, 4.SHOWA DENKO K.K.)

3:45 PM - 4:00 PM

△ [19p-Z25-11] Fabrication of N-polar GaN/AlGaN heterostructure on a 6 inch Si (100) substrate by epitaxial-layer transfer technique

〇Yuki Yoshiya¹, Takuya Hoshi¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs)

4:00 PM - 4:15 PM

[19p-Z25-12] Residual stress characterization of GaN/Diamond bonding interface by Raman spectroscopy

〇Ayaka Kobayashi¹, Yasuo Shimizu², Yutaka Ohno², Seong-Woo Kim³, Koji Koyama³, Makoto Kasu⁴, Naoteru Shigekawa¹, Jianbo Liang¹ (1.OsakaCity Univ., 2.IMR Tohoku Univ., 3.AdamantNamikiPrecisionJewel Co.,Ltd., 4.Saga Univ.)

4:15 PM - 4:30 PM

△ [19p-Z25-13] Fabrication of diamond/Si heterojunction diodes by surface activated bonding

〇(DC)Yota Uehigashi¹, Shinya Ohmagari², Hitoshi Umezawa², Hideaki Yamada², Jianbo Liang¹, Naoteru Shigekawa¹ (1.Osaka City Univ., 2.AIST)

4:30 PM - 4:45 PM

▲ [19p-Z25-14] 2608 V Operation of NO₂-Doped p-channel Diamond MOSFETs

〇Niloy Chandra Saha¹, SeongWoo Kim², Toshiyuki Oishi¹, Yuki Kawamata², Koji Koyama², Makoto Kasu¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

Poster presentation

[19p-P06-1~9] 13.7 Compound and power electron devices and process technology

Fri. Mar 19, 2021 5:00 PM - 5:50 PM P06 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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5:00 PM - 5:50 PM

[19p-P06-1] Cathode-electrode on photoelectrochemical (PEC) etching for n-GaN on n+GaN substrate

NOBORU FUKUHARA¹, 〇FUMIMASA HORIKIRI¹, MASACHIKA TOGUCHI², KAZUKI MIWA², HIROKI OGAMI², TAKETOMO SATO² (1.SCIOCS, 2.Hokkaido Univ.)

5:00 PM - 5:50 PM

[19p-P06-2] Effects of forming gas annealing on electrical properties of Pt/ALD-Al₂O₃/AlGaN/GaN MIS-HEMTsⅢ

〇Toshiharu Kubo¹, Nobuki Yoshida¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

5:00 PM - 5:50 PM

[19p-P06-3] Effect of forward bias application on 0.88 eV hole trap in hydrogen-implanted n⁺p GaN

〇Yutaka Tokuda¹, Hikaru Yoshida¹, Kazuyoshi Tomita², Tetsu Kachi², Joji Ito³, Takahide Yagi³ (1.Aichi Inst. Technol., 2.Nagoya University, 3.SHI-ATEX Co., Ltd)

5:00 PM - 5:50 PM

[19p-P06-4] Generation of hole trap in p-GaN layer by forward current injection

〇Hikaru Yoshida¹, Wakana Takeuchi¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

5:00 PM - 5:50 PM

[19p-P06-5] Effect of Oxygen on Thermionic Emission Characteristics from High Al Composition AlGaN Thin Film

〇Takuya Fujimoto¹, Shigeya Kimura², Hisashi Yoshida², Hisao Miyazaki², Akihisa Ogino¹ (1.Shizuoka Univ., 2.Toshiba Corp.)

5:00 PM - 5:50 PM

[19p-P06-6] Simulation Study on a GaN-npn HBT with a AlGaInN Emitter Layer and a Quantum Well Base layer

〇Yutaka Nikai¹, Yusuke Iida¹, Akira Mase¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.NITech)

5:00 PM - 5:50 PM

[19p-P06-7] RonA reduction of 600V vertical GaN-DMOSFET for high speed switching

〇Takuro Inamoto¹, Yuta Fukushima¹, Ryo Tanaka¹, Katsunori Ueno¹, Shinya Takashima¹, Masaharu Edo¹ (1.Fuji Electric)

5:00 PM - 5:50 PM

▲ [19p-P06-8] Comparison of side-gate modulation responses for AlGaN/GaN HEMTs on GaN substrates with and without C-doped GaN buffer layer

〇(P)Maria Villamin¹, Naotaka Iwata¹ (1.Toyota Tech. Inst.)

5:00 PM - 5:50 PM

[19p-P06-9] Investigation of monolithic integrated circuit using based-on AlGaN/GaN heterostructure

〇Tomoaki Kawauchi¹, Mao Fukinaka¹, Tomoaki Mashimo¹, Hiroshi Okada¹ (1.Toyohashi Univ. Tech)

Sessions

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[16a-Z16-1~11] 13.7 Compound and power electron devices and process technology

△ [16a-Z16-1] First-principles calculation study on the atomic and electronic structures at the (Al2O3)1-x(SiO2)x/GaN interfaces.

△ [16a-Z16-6] Investigation of Post-Deposition Annealing Conditions for Improving Interface Property of SiO2/GaN MOS Devices

[18a-Z15-1~10] 13.7 Compound and power electron devices and process technology

△ [18a-Z15-6] Effect of recoil-implanted N atoms on defect formation in Mg-implanted GaN

△ [18a-Z15-7] Effect of beam current on the formation of defects by high-temperature implantation of Mg ions into GaN

△ [18a-Z15-8] Impact of Schottky barrier height on the detection of deep-levels in n-type GaN by deep-level transient spectroscopy

[19a-Z25-1~8] 13.7 Compound and power electron devices and process technology

[19p-Z25-1~14] 13.7 Compound and power electron devices and process technology

△ [19p-Z25-5] Fabrication and characterization of AlGaN channel HFETs with selective-area regrowth ohmic contacts

△ [19p-Z25-6] Growth and characterization of Al0.4Ga0.6N channel 2DEG heterostructures with quaternary AlGaInN barrier layers

△ [19p-Z25-7] Fabrication of AlGaN/GaN HBT with Continuous-grown N-p-n Junctions

△ [19p-Z25-10] Atomic Layer Selective GaN/SiN Etching by HBr Neutral Beam

△ [19p-Z25-11] Fabrication of N-polar GaN/AlGaN heterostructure on a 6 inch Si (100) substrate by epitaxial-layer transfer technique

△ [19p-Z25-13] Fabrication of diamond/Si heterojunction diodes by surface activated bonding

▲ [19p-Z25-14] 2608 V Operation of NO2-Doped p-channel Diamond MOSFETs

[19p-P06-1~9] 13.7 Compound and power electron devices and process technology

▲ [19p-P06-8] Comparison of side-gate modulation responses for AlGaN/GaN HEMTs on GaN substrates with and without C-doped GaN buffer layer

Authenticate

△ [16a-Z16-1] First-principles calculation study on the atomic and electronic structures at the (Al₂O₃)_1-x(SiO₂)_x/GaN interfaces.

△ [16a-Z16-6] Investigation of Post-Deposition Annealing Conditions for Improving Interface Property of SiO₂/GaN MOS Devices

△ [19p-Z25-6] Growth and characterization of Al_0.4Ga_0.6N channel 2DEG heterostructures with quaternary AlGaInN barrier layers

▲ [19p-Z25-14] 2608 V Operation of NO₂-Doped p-channel Diamond MOSFETs