The 68th JSAP Spring Meeting 2021

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

[16p-P12-1~4] 13.3 Insulator technology

Tue. Mar 16, 2021 5:00 PM - 5:50 PM P12 (Poster)

5:00 PM - 5:50 PM

[16p-P12-2] Theoretical Study of Strain Effect on Vacancies in SiO2

〇(M1C)Takehiro Nishimura1, Hiroyuki Kageshima1 (1.Shimane Univ.)

Keywords:dielectric breakdown, defect, first principles calculation

We have studied the strain effect on defects of Si oxide film by using the first principles calculation so as to clarify the dielectric breakdown for 3D Si MOSFET.