[16p-Z26-1~15] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

[16p-Z26-1] [Young Scientist Presentation Award Speech] Reliability characteristics of Ferroelectric-HfO2 capacitor with IGZO capping for non-volatile memory application

〇FEI MO¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo)

Keywords:Ferroelectric, memory, IGZO

Recently, due to the good CMOS compatibility non-destructive readout, low power consumption and high program/erase speed, ferroelectric-HfO2 FET memories have attracted more attentions . Toward even higher density, 3D vertical structure has been proposed. 3D vertical NAND type FeFET using Poly-si channel and its memory operation have been demonstrated . However, there are several challenges with poly-Si channel such as low mobility of very thin poly-Si channel. IGZO is a promising channel material to solve these problems because its high mobility. IGZO FeFET also benefits from nearly-zero interfacial layer between IGZO channel and gate oxide . However, the reliability characteristics of metal/FE-HfO2/IGZO has not been fully investigated, yet. In this paper, we fabricate and characterize the ferroelectric property of FE-HfO2 with IGZO cap. Then, we investigate the impact of the IGZO cap on the reliability of the fabricated capacitor regarding endurance and retention characteristics. Lastly, an imprint effect on the capacitor is studied.