[16p-Z26-1~15] CS.5 6.1 強誘電体薄膜、13.3 絶縁膜技術、13.5 デバイス／配線／集積化技術のコードシェアセッション

[16p-Z26-1] [講演奨励賞受賞記念講演] Reliability characteristics of Ferroelectric-HfO2 capacitor with IGZO capping for non-volatile memory application

〇莫 非¹、更屋 拓哉¹、平本 俊郎¹、小林 正治¹ (1.東大生産研)

キーワード：強誘電体、メモリ、酸化物半導体

Recently, due to the good CMOS compatibility non-destructive readout, low power consumption and high program/erase speed, ferroelectric-HfO2 FET memories have attracted more attentions . Toward even higher density, 3D vertical structure has been proposed. 3D vertical NAND type FeFET using Poly-si channel and its memory operation have been demonstrated . However, there are several challenges with poly-Si channel such as low mobility of very thin poly-Si channel. IGZO is a promising channel material to solve these problems because its high mobility. IGZO FeFET also benefits from nearly-zero interfacial layer between IGZO channel and gate oxide . However, the reliability characteristics of metal/FE-HfO2/IGZO has not been fully investigated, yet. In this paper, we fabricate and characterize the ferroelectric property of FE-HfO2 with IGZO cap. Then, we investigate the impact of the IGZO cap on the reliability of the fabricated capacitor regarding endurance and retention characteristics. Lastly, an imprint effect on the capacitor is studied.