[16p-Z26-1~15] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

▼ [16p-Z26-13] Fabrication of ferroelectric gate thin film transistors using CSD Y-HZO and sputtered HZO with sputtered ITO channel

〇(DC)Mohit Mohit¹, Shinji Migita², Hiroyuki Ota², Yukinori Morita², Eisuke Tokumitsu¹ (1.JAIST, 2.AIST)

Keywords:Hafnium Zirconium Dioxide, Ferroelectric Gate Transistors (FGT), Chemical Solution Deposition

Ferroelectric gate thin film transistor (FGT) with sputtered indium-tin-oxide (ITO) channel has been fabricated using solution derived Y-doped Hf-Zr-O (HZO) and sputtered HZO films. A significant difference in the stability of ferroelectricity was found. Sputtered HZO, which showed good ferroelectric properties for MFM capacitors, has turned to paraelectric after the FGT fabrication, and no transistor operation was obtained. On the other hand, CSD Y-HZO remained ferroelectric after the FGT fabrication, and transfer curves with hysteresis due to ferroelectric gate insulator was observed.